Intersubband transitions in GaAs coupled-quantum-wells for use as a tunable detector at THz frequencies

被引：10
|
作者：
Tomlinson, AM [1 ]
Chang, CC
Stone, RJ
Nicholas, RJ
Fox, AM
Pate, MA
Foxon, CT
机构：
[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Sheffield, EPSRC Cent Facil Semicond 3 5, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[4] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期
关键词：
D O I：
10.1063/1.126101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a detection mechanism for 2-5 THz radiation using intersubband transitions between anticrossing electron levels in a GaAs/AlGaAs coupled-quantum-well photodiode. The THz radiation is detected as a modulation in the photocurrent generated by a visible laser. This modulation is caused by carrier heating effects due to absorption of energy by intersubband transitions. Since the frequency of the intersubband transitions varies with the electric-field strength, the device can function as a voltage-tunable THz detector. (C) 2000 American Institute of Physics. [S0003-6951(00)02012-X].
引用
收藏
页码：1579 / 1581
页数：3
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