Estimates of the Spontaneous Polarization and Permittivities of AlN, GaN, InN, and SiC Crystals

被引：17
|
作者：
Davydov, S. Yu. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
PHYSICS OF THE SOLID STATE | 2009年 / 51卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
ELECTRON MOBILITIES; SILICON-CARBIDE;
D O I：
10.1134/S1063783409060249
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The values of spontaneous polarization and permittivities of aluminum, gallium, and indium nitrides, as well as silicon carbide, with a wurtzite structure are calculated within the Harrison bond-orbital model. The only fitting parameter gamma, which characterizes corrections for a local field, is determined from the fit of the calculated high-frequency permittivity epsilon(infinity) to the experimental data for compounds with a sphalerite structure. The results obtained are in satisfactory agreement with the available experimental data and calculations performed by other authors.
引用
收藏
页码：1231 / 1235
页数：5
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