Estimates of the Spontaneous Polarization and Permittivities of AlN, GaN, InN, and SiC Crystals

被引：17

作者：

Davydov, S. Yu. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2009年 / 51卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRON MOBILITIES; SILICON-CARBIDE;

D O I：

10.1134/S1063783409060249

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The values of spontaneous polarization and permittivities of aluminum, gallium, and indium nitrides, as well as silicon carbide, with a wurtzite structure are calculated within the Harrison bond-orbital model. The only fitting parameter gamma, which characterizes corrections for a local field, is determined from the fit of the calculated high-frequency permittivity epsilon(infinity) to the experimental data for compounds with a sphalerite structure. The results obtained are in satisfactory agreement with the available experimental data and calculations performed by other authors.

引用

页码：1231 / 1235

页数：5

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