Reliability study on three-dimensional Au/WSiN interconnections for ultra-compact MMICs

被引：0

作者：

Sugahara, H

Kimizuka, M

Fukai, YK

Hirano, M

Hyuga, F

机构：

[1] NTT System Electronics Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

MICROELECTRONICS RELIABILITY | 1997年 / 37卷 / 10-11期

关键词：

D O I：

10.1016/S0026-2714(97)00133-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the reliability of three-dimensional Au/WSiN interconnections buried in a polyimide layer. Temperature cycle tests and bias stress tests reveal the high stability of this system. It is found that the enhanced degradation occurs at the Au/WSiN viahole contacts, which strongly depends on the current density. SEM analysis reveals the void formation in the Au layer near the Au-WSiN interface, which can be explained by the dam effect created by the WSiN layer. (C) 1997 Elsevier Science Ltd.

引用

页码：1659 / 1662

页数：4

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