Reliability study on three-dimensional Au/WSiN interconnections for ultra-compact MMICs

被引：0
|
作者：
Sugahara, H
Kimizuka, M
Fukai, YK
Hirano, M
Hyuga, F
机构：
[1] NTT System Electronics Laboratories, Atsugi-shi, Kanagawa 243-01
来源：
MICROELECTRONICS RELIABILITY | 1997年 / 37卷 / 10-11期
关键词：
D O I：
10.1016/S0026-2714(97)00133-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the reliability of three-dimensional Au/WSiN interconnections buried in a polyimide layer. Temperature cycle tests and bias stress tests reveal the high stability of this system. It is found that the enhanced degradation occurs at the Au/WSiN viahole contacts, which strongly depends on the current density. SEM analysis reveals the void formation in the Au layer near the Au-WSiN interface, which can be explained by the dam effect created by the WSiN layer. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：1659 / 1662
页数：4
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