Influence of ambient gas on formation process of Si nanoparticles by laser ablation

被引：21
|
作者：
Muramoto, J [1 ]
Inmaru, T [1 ]
Nakata, Y [1 ]
Okada, T [1 ]
Maeda, M [1 ]
机构：
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8128581, Japan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期
关键词：
D O I：
10.1007/s003399900224
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We described the influence of a type of gas and its pressure upon the size distribution of Si nanoparticles fabricated by laser ablation in an ambient gas and the plume dynamics during the synthesis. The plume dynamics was investigated by laser-induced fluorescence anti ultraviolet Rayleigh scattering. Based on the results, the importance of the gas flow within the ablation plume in the formation of the nanoparticles is understood.
引用
收藏
页码：S239 / S241
页数：3
相关论文
共 50 条
  • [31] Deposition dynamics of droplet-free Si nanoparticles in Ar gas using laser ablation
    Takeuchi, D
    Mizuta, T
    Makimura, T
    Yoshida, S
    Fujita, M
    Hata, K
    Shigekawa, H
    Murakami, K
    APPLIED SURFACE SCIENCE, 2002, 197 : 674 - 678
  • [32] Laser induced metal ablation at high ambient gas pressure
    Chivel, Yu.
    Nasonov, V.
    FUNDAMENTALS OF LASER-ASSISTED MICRO- AND NANOTECHNOLOGIES 2010, 2011, 7996
  • [33] Monte Carlo simulation of pulsed laser ablation into an ambient gas
    Itina, TE
    Marine, W
    Autric, M
    COMPUTATIONAL MATERIALS SCIENCE, 1998, 10 (1-4) : 144 - 147
  • [34] Influence of ambient gas on the growth kinetics of Si nanocones
    Wan, Y. T.
    Sha, J.
    Wang, Z. L.
    Wang, Y. W.
    APPLIED PHYSICS LETTERS, 2010, 97 (15)
  • [35] Influence of ambient pressure on the hole formation process in ultrashort pulse laser deep drilling
    Doering, Sven
    Richter, Soeren
    Ullsperger, Tobias
    Tuennermann, Andreas
    Nolte, Stefan
    FRONTIERS IN ULTRAFAST OPTICS: BIOMEDICAL, SCIENTIFIC, AND INDUSTRIAL APPLICATIONS XIII, 2013, 8611
  • [36] Influence of ambient gas on the microstructural properties of Er-doped nanocystalline Si film fabricated by pulsed laser ablation - art. no. 672237
    Zhou, Yang
    Chu, Lizhi
    Duan, Pingguang
    Xu, Wei
    Wang, Yinglong
    Guangsheng, F.
    ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, PTS 1 AND 2, 2007, 6722 : 72237 - 72237
  • [37] Influence of pulse width on the laser ablation of zinc in nitrogen ambient
    N. Smijesh
    Kavya H. Rao
    Reji Philip
    Applied Physics A, 2016, 122
  • [38] Influence of pulse width on the laser ablation of zinc in nitrogen ambient
    Smijesh, N.
    Rao, Kavya H.
    Philip, Reji
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (04):
  • [39] The influence of ambient temperature on femtosecond laser ablation of semiconductor and metal
    Yahng, J. S.
    Nam, J. R.
    Yoon, T. O.
    Jeoung, S. C.
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 1296 - 1297
  • [40] The influence of ambient temperature on KrF laser ablation of polyimide in air
    Braun, A
    Zimmer, K
    Bigl, F
    APPLIED SURFACE SCIENCE, 2000, 154 : 73 - 77
12345