Using I-DDQ drift testing to detect hydrogen in MOS devices

被引：0

作者：

Sabin, E

Nagalingam, S

Lemke, S

机构：

来源：

1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL | 1997年

关键词：

D O I：

10.1109/RELPHY.1997.584237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：57 / 65

页数：9

共 40 条

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[28] Using fault sampling to compute I-DDQ diagnostic test sets
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[29] Burn-in elimination of a high volume microprocessor using I-DDQ
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[30] Separate I-DDQ testing of signal and bias paths in CMOS ICs for defect diagnosis
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