Coherent and incoherent carrier dynamics of InGaAs quantum dots analyzed by transient photoluminescence

被引：2

作者：

Nishimura, T

Lan, S

Akahane, K

Kawabe, M

Wada, O

机构：

[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058537, Japan

[3] FESTA, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

carrier dynamics; highly packed quantum dots; tunneling; coherent coupling;

D O I：

10.1016/S0022-2313(99)00221-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Two-dimensional InGaAs quantum dot superlattice is expected to offer coherent exciton formation enabling rapid carrier recombination. As the exciton coherent length is elongated by lowering the excitation power density, a transition of coupling among quantum dots from incoherent to coherent was confirmed. The photoluminescence decay time exhibited significant reduction at higher energy of emission indicating very fast carrier transfer at the bottom of miniband energy. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：494 / 496

页数：3

共 50 条

[31] Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
Wang, Ying
Sheng, Xinzhi
Yuan, Qing
Guo, Qinglin
Wang, Shufang
Fu, Guangsheng
Liang, Baolai
Huffaker, Diana L.
Mazur, Yuriy, I
Maidaniuk, Yurii
Ware, Morgan E.
Salamo, Gregory J.
JOURNAL OF LUMINESCENCE, 2018, 202 : 20 - 26
[32] Photoluminescence dynamics of coupled quantum dots
Nakatani, H.
Kita, T.
Kojima, O.
Wada, O.
Akahane, K.
Tsuchiya, M.
JOURNAL OF LUMINESCENCE, 2008, 128 (5-6) : 975 - 977
[33] Coherent Energy Transfer Dynamics and Photoluminescence of Coupled Quantum Dots: Fully Analytical Approach
Ahn, Kwang Jun
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2018, 73 (05) : 638 - 648
[34] Coherent Energy Transfer Dynamics and Photoluminescence of Coupled Quantum Dots: Fully Analytical Approach
Kwang Jun Ahn
Journal of the Korean Physical Society, 2018, 73 : 638 - 648
[35] Coherent and incoherent charge transport in linear triple quantum dots
Contreras-Pulido, L. D.
Bruderer, M.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (18)
[36] Transient electromagnetically induced transparency in InGaAs quantum dots
Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 16440 Kista, Switzerland
不详
Optics InfoBase Conference Papers, 2008,
[37] Transient electromagnetically induced transparency in InGaAs quantum dots
Marcinkevicius, S.
Gusterov, A.
Reithmaier, J. P.
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 3597 - +
[38] Enhanced photoluminescence of InGaAs quantum dots induced by nanoprobe indentation
Ozasa, K
Aoyagi, Y
Hara, M
Maeda, M
Yamane, A
Arai, Y
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 265 - 269
[39] Photoluminescence and lasing characteristics of InGaAs/InGaAsP/InP quantum dots
Pyun, SH
Lee, SH
Lee, IC
Kim, HD
Jeong, WG
Jang, JW
Kim, NJ
Hwang, MS
Lee, D
Lee, JH
Oh, DK
JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5766 - 5770
[40] Photoluminescence and lasing characteristics of InGaAs/lnGaAsP/lnP quantum dots
Pyun, S.H., 1600, American Institute of Physics Inc. (96):

← 1 2 3 4 5 →