Coherent and incoherent carrier dynamics of InGaAs quantum dots analyzed by transient photoluminescence

被引:2
|
作者
Nishimura, T
Lan, S
Akahane, K
Kawabe, M
Wada, O
机构
[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan
[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058537, Japan
[3] FESTA, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan
关键词
carrier dynamics; highly packed quantum dots; tunneling; coherent coupling;
D O I
10.1016/S0022-2313(99)00221-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Two-dimensional InGaAs quantum dot superlattice is expected to offer coherent exciton formation enabling rapid carrier recombination. As the exciton coherent length is elongated by lowering the excitation power density, a transition of coupling among quantum dots from incoherent to coherent was confirmed. The photoluminescence decay time exhibited significant reduction at higher energy of emission indicating very fast carrier transfer at the bottom of miniband energy. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:494 / 496
页数:3
相关论文
共 50 条
  • [11] Carrier dynamics in p-type InGaAs/GaAs quantum dots
    Wen, X. M.
    Dao, L. V.
    Davis, J. A.
    Hannaford, P.
    Mokkapati, S.
    Tan, H. H.
    Jagadish, C.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (Suppl 1) : S363 - S365
  • [12] Carrier dynamics in particle-irradiated InGaAs/GaAs quantum dots
    Cavaco, A
    Sobolev, NA
    Carmo, MC
    Guffarth, F
    Born, H
    Heitz, R
    Hoffmann, A
    Bimberg, D
    2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1177 - 1180
  • [13] Carrier dynamics in particle-irradiated InGaAs/GaAs quantum dots
    Cavaco, A.
    Sobolev, N.A.
    Carmo, M.C.
    Guffarth, F.
    Born, H.
    Heitz, R.
    Hoffmann, A.
    Bimberg, D.
    Physica Status Solidi C: Conferences, 2003, (04): : 1177 - 1180
  • [14] Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy
    Mazur, Yu. I.
    Dorogan, V. G.
    Guzun, D.
    Marega, E., Jr.
    Salamo, G. J.
    Tarasov, G. G.
    Govorov, A. O.
    Vasa, P.
    Lienau, C.
    PHYSICAL REVIEW B, 2010, 82 (15):
  • [15] Multiline photoluminescence of single InGaAs quantum dots
    Hodeck, K
    Manke, I
    Geller, M
    Heitz, R
    Heinrichsdorff, F
    Krost, A
    Bimberg, D
    Eisele, H
    Dähne, M
    2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1209 - 1212
  • [16] Photoluminescence characterization of InGaAs/InP quantum dots
    Gu, S.Q.
    Reuter, E.
    Xu, Q.
    Panepucci, R.
    Chen, A.C.
    Chang, H.
    Adesida, Ilesanmi
    Cheng, K.Y.
    Bishop, Stephen G.
    Caneau, C.
    Bhat, R.
    Proceedings of SPIE - The International Society for Optical Engineering, 1994, 2364 : 406 - 411
  • [17] Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots
    Zhang, L
    Boggess, TF
    Gundogdu, K
    Flatté, ME
    Deppe, DG
    Cao, C
    Shchekin, OB
    APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3320 - 3322
  • [18] Ultrafast Carrier Dynamics in an InAs/InGaAs Quantum-Dots-in-a-Well Photodetector
    Prasankumar, R. P.
    Attaluri, R. S.
    Averitt, P. D.
    Stintz, A.
    Krishna, S.
    Taylor, A. J.
    2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, : 979 - +
  • [19] Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots
    Steinhoff, A.
    Kurtze, H.
    Gartner, P.
    Florian, M.
    Reuter, D.
    Wieck, A. D.
    Bayer, M.
    Jahnke, F.
    PHYSICAL REVIEW B, 2013, 88 (20)
  • [20] Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure
    Prasankumar, R. P.
    Attaluri, R. S.
    Averitt, R. D.
    Urayama, J.
    Weisse-Bernstein, N.
    Rotella, P.
    Stintz, A. D.
    Krishna, S.
    Taylor, A. J.
    OPTICS EXPRESS, 2008, 16 (02) : 1165 - 1173