Far-field expression of a high-power laser diode

被引：18

作者：

Zeng, XD ^{[1
]}

Feng, ZJ ^{[1
]}

An, YY ^{[1
]}

机构：

[1] Xidian Univ, Sch Tech Phys, Xian 710071, Peoples R China

来源：

APPLIED OPTICS | 2004年 / 43卷 / 27期

关键词：

D O I：

10.1364/AO.43.005168

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Based on the off-axis theory, a model for describing the far field with the bipeak structure of a high-power laser diode is proposed. The computed results agree well with the measured far-field data of practical devices. A minimum overall error criterion for fitting the theoretical model with the measured data is also given. The results show that the overall error of this model is less than 5% for popular laser diodes. This model has a simple mathematical structure and can be easily used to design the beam-shaping system and to analyze the propagation properties when the laser beam passes through an optic system. (C) 2004 Optical Society of America.

引用

页码：5168 / 5172

页数：5

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