Far-field expression of a high-power laser diode

被引：18
|
作者：
Zeng, XD [1 ]
Feng, ZJ [1 ]
An, YY [1 ]
机构：
[1] Xidian Univ, Sch Tech Phys, Xian 710071, Peoples R China
来源：
APPLIED OPTICS | 2004年 / 43卷 / 27期
关键词：
D O I：
10.1364/AO.43.005168
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Based on the off-axis theory, a model for describing the far field with the bipeak structure of a high-power laser diode is proposed. The computed results agree well with the measured far-field data of practical devices. A minimum overall error criterion for fitting the theoretical model with the measured data is also given. The results show that the overall error of this model is less than 5% for popular laser diodes. This model has a simple mathematical structure and can be easily used to design the beam-shaping system and to analyze the propagation properties when the laser beam passes through an optic system. (C) 2004 Optical Society of America.
引用
收藏
页码：5168 / 5172
页数：5
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