High-aspect-ratio deep Si etching of micro/nano scale features with SF6/H2/O2 plasma, in a low plasma density reactive ion etching system

被引：0

作者：

Sanaee, Z. ^{[1
]}

Poudineh, M. ^{[1
]}

Mehran, M. ^{[1
]}

Azimi, S. ^{[1
]}

Mohajerzadeh, S. ^{[1
]}

机构：

[1] Univ Tehran, Sch Elect & Comp Engn, Thin Film & Nanoelect Lab, Tehran, Iran

来源：

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年

关键词：

deep etching; silicon; reactive ion etch;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using three gasese of SF6, O-2 and H-2, deep vertical etching of silicon substrates in a low plasma density environment is reported. A reactive ion etching (RIE) unit with an operating frequency of 13.56 MHz has been used with plasma power densities below 1 W/cm(2). The vertical etching process is based on a sequential method with two sub-sequenes, etching and passivation. High etch rates of the order of 0.7 to 1.5 mu m/min for deep sub -micrometer features, and aspect ratios about 100 for nano-rods have been achieved.

引用

页码：325 / 328

页数：4

共 50 条

[41] High-temperature etching of SiC in SF6/O2 inductively coupled plasma
Osipov, Artem A.
Iankevich, Gleb A.
Speshilova, Anastasia B.
Osipov, Armenak A.
Endiiarova, Ekaterina, V
Berezenko, Vladimir, I
Tyurikova, Irina A.
Tyurikov, Kirill S.
Alexandrov, Sergey E.
SCIENTIFIC REPORTS, 2020, 10 (01)
[42] High-temperature etching of SiC in SF6/O2 inductively coupled plasma
Artem A. Osipov
Gleb A. Iankevich
Anastasia B. Speshilova
Armenak A. Osipov
Ekaterina V. Endiiarova
Vladimir I. Berezenko
Irina A. Tyurikova
Kirill S. Tyurikov
Sergey E. Alexandrov
Scientific Reports, 10
[43] Plasma etching of benzocyclobutene in CF4/O2 and SF6/O2 plasmas
Kim, G. S.
Steinbruchel, C.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03): : 424 - 430
[44] THE CHARACTERISTICS OF REACTIVE ION ETCHING OF POLYSILICON USING SF6/O2 AND THEIR INTERDEPENDENCE
TANDON, US
PANT, BD
VACUUM, 1991, 42 (13) : 837 - 843
[45] Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching
Choi, J. H.
Latu-Romain, L.
Bano, E.
Dhalluin, F.
Chevolleau, T.
Baron, T.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (23)
[46] Physics-Informed Compact Model for SF6/O2 Plasma Etching
Filipovic, Lado
Bobinac, Josip
Piso, Julius
Reiter, Tobias
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2023, : 73 - 76
[47] Inverse RIE Lag during Silicon Etching in SF6 + O2 Plasma
Knizikevicius, R.
ACTA PHYSICA POLONICA A, 2020, 137 (03) : 313 - 316
[48] Physics-Informed Compact Model for SF6/O2 Plasma Etching
Filipovic, Lado
Bobinac, Josip
Piso, Julius
Reiter, Tobias
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD, 2023, : 73 - 76
[49] Low temperature SF6/O2 electron cyclotron resonance plasma etching for polysilicon gates
Hasan, I
Pawlowicz, CA
Berndt, LP
Tarr, NG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (03): : 983 - 985
[50] Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring
Dewan, MNA
McNally, PJ
Perova, T
Herbert, PAF
MICROELECTRONIC ENGINEERING, 2003, 65 (1-2) : 25 - 46

← 1 2 3 4 5 →