High-aspect-ratio deep Si etching of micro/nano scale features with SF6/H2/O2 plasma, in a low plasma density reactive ion etching system

被引：0

作者：

Sanaee, Z. ^{[1
]}

Poudineh, M. ^{[1
]}

Mehran, M. ^{[1
]}

Azimi, S. ^{[1
]}

Mohajerzadeh, S. ^{[1
]}

机构：

[1] Univ Tehran, Sch Elect & Comp Engn, Thin Film & Nanoelect Lab, Tehran, Iran

来源：

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年

关键词：

deep etching; silicon; reactive ion etch;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using three gasese of SF6, O-2 and H-2, deep vertical etching of silicon substrates in a low plasma density environment is reported. A reactive ion etching (RIE) unit with an operating frequency of 13.56 MHz has been used with plasma power densities below 1 W/cm(2). The vertical etching process is based on a sequential method with two sub-sequenes, etching and passivation. High etch rates of the order of 0.7 to 1.5 mu m/min for deep sub -micrometer features, and aspect ratios about 100 for nano-rods have been achieved.

引用

页码：325 / 328

页数：4

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