Field-Emission Diodes Based on Semiconductor-Polycrystalline Diamond Heterojunctions

被引：1

作者：

Bespalov, V. A. ^{[1
]}

Il'ichev, E. A. ^{[1
]}

Kuleshov, A. E. ^{[1
]}

Migunov, D. M. ^{[1
]}

Nabiev, R. M. ^{[1
]}

Petrukhin, G. N. ^{[1
]}

Rychkov, G. S. ^{[1
]}

Sakharov, O. A. ^{[1
]}

Shcherbakhin, Yu. V. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol MIET, Moscow 124460, Russia

来源：

TECHNICAL PHYSICS | 2014年 / 59卷 / 10期

关键词：

Diamond Film; Plasma Enhance Chemical Vapor Deposition; Gallium Nitride; Polycrystalline Diamond; Scanning Electron Micro Image;

D O I：

10.1134/S1063784214100090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor-polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone ( tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm(2) is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.

引用

页码：1531 / 1535

页数：5

共 50 条

[21] FIELD-EMISSION OF ELECTRONS FROM SEMICONDUCTOR CRYSTALS
MITSKIS, AYY
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1972, 26 (12) : 102 - 102
[22] THERMIONIC FIELD-EMISSION IN POLYCRYSTALLINE-SILICON FILMS
LU, NCC
GERZBERG, L
LU, CY
MEINDL, JD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C396 - C396
[23] Field-emission activation on boron-doped chemical-vapor-deposited polycrystalline diamond films
Tomokage, H. (tomokage@guppy.tl.fukuoka-u.ac.jp), 1600, Japan Society of Applied Physics (41):
[24] Field-emission activation on boron-doped chemical-vapor-deposited polycrystalline diamond films
Kim, YD
Choi, W
Wang, CH
Ando, T
Jeon, H
Chang, SY
Tomokage, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (5A): : 3081 - 3084
[25] FABRICATION AND CHARACTERIZATION OF SILICON FIELD-EMISSION DIODES AND TRIODES
LI, Q
YUAN, MY
KANG, WP
TANG, SH
XU, JF
ZHANG, D
WU, JL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 676 - 679
[26] FIELD-EMISSION FROM SILICON SPIKES WITH DIAMOND COATINGS
ZHIRNOV, VV
GIVARGIZOV, EI
PLEKHANOV, PS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 418 - 421
[27] CALCULATION OF ELECTRON FIELD-EMISSION FROM DIAMOND SURFACES
HUANG, ZH
CUTLER, PH
MISKOVSKY, NM
SULLIVAN, TE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 526 - 530
[28] Diamond Photocathodes As Field-Emission Electrodes for Vacuum Microelectronics
Il'ichev, E. A.
Kuleshov, A. E.
Petrukhin, G. N.
Minakov, P., V
Rychkov, G. S.
Sen, V. V.
Teverovskaya, E. G.
TECHNICAL PHYSICS LETTERS, 2021, 47 (07) : 503 - 506
[29] MICROSTRUCTURE AND FIELD-EMISSION OF DIAMOND PARTICLES ON SILICON TIPS
GIVARGIZOV, EI
ZHIRNOV, VV
STEPANOVA, AN
RAKOVA, EV
KISELEV, AN
PLEKHANOV, PS
APPLIED SURFACE SCIENCE, 1995, 87-8 (1-4) : 24 - 30
[30] THEORETICAL-STUDY OF FIELD-EMISSION FROM DIAMOND
HUANG, ZH
CUTLER, PH
MISKOVSKY, NM
SULLIVAN, TE
APPLIED PHYSICS LETTERS, 1994, 65 (20) : 2562 - 2564

← 1 2 3 4 5 →