Field-Emission Diodes Based on Semiconductor-Polycrystalline Diamond Heterojunctions

被引：1

作者：

Bespalov, V. A. ^{[1
]}

Il'ichev, E. A. ^{[1
]}

Kuleshov, A. E. ^{[1
]}

Migunov, D. M. ^{[1
]}

Nabiev, R. M. ^{[1
]}

Petrukhin, G. N. ^{[1
]}

Rychkov, G. S. ^{[1
]}

Sakharov, O. A. ^{[1
]}

Shcherbakhin, Yu. V. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol MIET, Moscow 124460, Russia

来源：

TECHNICAL PHYSICS | 2014年 / 59卷 / 10期

关键词：

Diamond Film; Plasma Enhance Chemical Vapor Deposition; Gallium Nitride; Polycrystalline Diamond; Scanning Electron Micro Image;

D O I：

10.1134/S1063784214100090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor-polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone ( tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm(2) is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.

引用

页码：1531 / 1535

页数：5

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