Field-Emission Diodes Based on Semiconductor-Polycrystalline Diamond Heterojunctions

被引：1
|
作者：
Bespalov, V. A. [1 ]
Il'ichev, E. A. [1 ]
Kuleshov, A. E. [1 ]
Migunov, D. M. [1 ]
Nabiev, R. M. [1 ]
Petrukhin, G. N. [1 ]
Rychkov, G. S. [1 ]
Sakharov, O. A. [1 ]
Shcherbakhin, Yu. V. [1 ]
机构：
[1] Natl Res Univ Elect Technol MIET, Moscow 124460, Russia
来源：
TECHNICAL PHYSICS | 2014年 / 59卷 / 10期
关键词：
Diamond Film; Plasma Enhance Chemical Vapor Deposition; Gallium Nitride; Polycrystalline Diamond; Scanning Electron Micro Image;
D O I：
10.1134/S1063784214100090
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor-polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone ( tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm(2) is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.
引用
收藏
页码：1531 / 1535
页数：5
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