Charge transport in hybrid solution processed heterojunction based on P3HT and ZnO from bilayer to blend

Ambipolar hybrid transistors were fabricated by using inorganic zinc oxide (ZnO) nanoparticles and an organic polymer, poly(3-hexylthiophene) (P3HT), as n- and p-type semiconductors, respectively. With well-adjusted ratio between n- and p-type, an ambipolar transport was observed in thin films based on either bilayer ZnO/P3HT or blend ZnO:P3HT architectures. Morphology of solution-processed thin films was studied by scanning electron microscopy (SEM). A hybrid interface was formed by the direct contact between ZnO and P3HT leading to carrier redistribution. Such solution-processed hybrid thin-film transistors delivered in air well balanced electron and hole mobilities for both bilayer and blend architectures.