Charge transport in hybrid solution processed heterojunction based on P3HT and ZnO from bilayer to blend

被引:2
|
作者
Diallo, A. K. [1 ]
Gaceur, M. [1 ]
Berton, N. [1 ]
Shupyk, I. [1 ]
Poize, G. [1 ]
Nenon, S. [1 ]
Margeat, O. [1 ]
Videlot-Ackermann, C. [1 ]
Ackermann, J. [1 ]
机构
[1] Aix Marseille Univ, UMR CNRS 7325, Ctr Interdisciplinaires Nanosci Marseille CINaM, F-13288 Marseille, France
关键词
ZnO; P3HT; heterojunction; thin film; morphology; ambipolar thin-film transistor; THIN-FILM TRANSISTORS; ZINC-OXIDE; PERFORMANCE; SEMICONDUCTOR; NANOPARTICLES; CELLS;
D O I
10.1504/IJNT.2014.063791
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ambipolar hybrid transistors were fabricated by using inorganic zinc oxide (ZnO) nanoparticles and an organic polymer, poly(3-hexylthiophene) (P3HT), as n- and p-type semiconductors, respectively. With well-adjusted ratio between n- and p-type, an ambipolar transport was observed in thin films based on either bilayer ZnO/P3HT or blend ZnO:P3HT architectures. Morphology of solution-processed thin films was studied by scanning electron microscopy (SEM). A hybrid interface was formed by the direct contact between ZnO and P3HT leading to carrier redistribution. Such solution-processed hybrid thin-film transistors delivered in air well balanced electron and hole mobilities for both bilayer and blend architectures.
引用
收藏
页码:819 / 828
页数:10
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