Towards 90% Bifaciality for p-Type Cz-Si Solar Cells by Adaption of Industrial PERC Processes

被引：0
|
作者：
Lohmueller, Elmar [1 ]
Lohmueller , Sabrina [1 ]
Norouzi, Mohammad H. [1 ]
Saint-Cast, Pierre [1 ]
Weber, Julian [1 ]
Meier, Sebastian [1 ]
Wolf, Andreas [1 ]
机构：
[1] Fraunhofer Inst Solar Energy Syst ISE, Heidenhofstr 2, D-79110 Freiburg, Germany
来源：
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
关键词：
bifaciality; bifacial p-type silicon solar cell; biPERC; biPERL; pPassDop; screen printing; undoped SiNX;
D O I：
暂无
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
We demonstrate a bifaciality of 88.0% for 6-inch bifacial p-type Cz-Si passivated emitter and rear cells (biPERC) and increase their rear side energy conversion efficiency to 18.0% by minor adaptions in the fabrication sequence. We utilize the "pPassDop" concept on the cells' rear side that applies an aluminum oxide and a boron-doped silicon nitride (SiNX: B) layer stack for simultaneous passivation and doping source. Laser doping forms the local p-doped back surface field regions for these biPERL solar cells. Screen-printed silver-aluminum metallization contacts these regions. We also demonstrate the compatibility of the laser doping approach with conventional (undoped) SiNX capping layer to fabricate biPERL devices with screen-printed contacts.
引用
收藏
页码：3727 / 3731
页数：5
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