Towards 90% Bifaciality for p-Type Cz-Si Solar Cells by Adaption of Industrial PERC Processes

被引：0

作者：

Lohmueller, Elmar ^{[1
]}

Lohmueller , Sabrina ^{[1
]}

Norouzi, Mohammad H. ^{[1
]}

Saint-Cast, Pierre ^{[1
]}

Weber, Julian ^{[1
]}

Meier, Sebastian ^{[1
]}

Wolf, Andreas ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, Heidenhofstr 2, D-79110 Freiburg, Germany

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

bifaciality; bifacial p-type silicon solar cell; biPERC; biPERL; pPassDop; screen printing; undoped SiNX;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

We demonstrate a bifaciality of 88.0% for 6-inch bifacial p-type Cz-Si passivated emitter and rear cells (biPERC) and increase their rear side energy conversion efficiency to 18.0% by minor adaptions in the fabrication sequence. We utilize the "pPassDop" concept on the cells' rear side that applies an aluminum oxide and a boron-doped silicon nitride (SiNX: B) layer stack for simultaneous passivation and doping source. Laser doping forms the local p-doped back surface field regions for these biPERL solar cells. Screen-printed silver-aluminum metallization contacts these regions. We also demonstrate the compatibility of the laser doping approach with conventional (undoped) SiNX capping layer to fabricate biPERL devices with screen-printed contacts.

引用

页码：3727 / 3731

页数：5

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