A physically based predictive model of charge trapping in gate oxides

被引：0
|
作者：
Lenahan, PM
Conley, JF
Wallace, BD
机构：
来源：
PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS | 1997年 / 97卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
By combining basic principles of the statistical mechanics of solids with an understanding of defect structure obtained through electron spin resonance, we have developed a physically based predictive model of hole trapping for high quality gate oxides on silicon. We find a close correspondence between the model's predictions and experimental results.
引用
收藏
页码：275 / 284
页数：10
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