Physically Based Predictive Model for Single Event Transients in CMOS Gates

被引：20

作者：

Saremi, Mehdi ^{[1
]}

Privat, Aymeric ^{[2
]}

Barnaby, Hugh J. ^{[1
]}

Clark, Lawrence T. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Univ Montpellier, F-34090 Montpellier, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 06期

基金：

美国国家科学基金会;

关键词：

CMOS inverter; physically based predictive model; single event transient (SET); TCAD mixed-mode device simulations; INDUCED PULSES; LOGIC; UPSET; SOI; MICROCIRCUITS; PROPAGATION; COLLECTION; CIRCUITS; DEVICES; ION;

D O I：

10.1109/TED.2016.2547423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model is presented to understand the time response of an inverter to ionizing particles based on physical equations. The model divides the output voltage transient response of an inverter into three time segments, where an ionizing particle striking through the drain-body junction of the OFF-state nMOS is represented as a photocurrent pulse. If this current source is large enough, the output voltage can drop to a negative voltage. In this model, the OFF-state nMOS is represented as the parallel combination of an ideal diode and the intrinsic capacitance of the drain-body junction, while a resistance represents an ON-state pMOS. The proposed model is verified by 3-D TCAD mixed-mode device simulations. In order to investigate the flexibility of the model, the effects of important parameters, such as ON-state pMOS resistance, doping concentration of P-region in the diode, and the photocurrent pulse are scrutinized.

引用

页码：2248 / 2254

页数：7

共 50 条

[1] Single Event Transients in CMOS Ring Oscillators
Prinzie, Jeffrey
De Smedt, Valentijn
ELECTRONICS, 2019, 8 (06):
[2] Single event transients in deep submicron CMOS
Hass, KJ
Gambles, JW
42ND MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, PROCEEDINGS, VOLS 1 AND 2, 1999, : 122 - 125
[3] Device-Physics-Based Analytical Model for Single-Event Transients in SOI CMOS Logic
Kobayashi, Daisuke
Hirose, Kazuyuki
Ferlet-Cavrois, Veronique
McMorrow, Dale
Makino, Takahiro
Ikeda, Hirokazu
Arai, Yasuo
Ohno, Morifumi
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) : 3043 - 3049
[4] Generation and propagation of single event transients in CMOS circuits
Wirth, Gilson I.
Vieira, Michele G.
Neto, Egas Henes
Kastensmidt, Fernanda L.
PROCEEDINGS OF THE 2006 IEEE WORKSHOP ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS AND SYSTEMS, 2006, : 198 - +
[5] Single Event Transients in Digital CMOS-A Review
Ferlet-Cavrois, Veronique
Massengill, Lloyd W.
Gouker, Pascale
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) : 1767 - 1790
[6] Analytical Modeling of Single Event Transients Propagation in Combinational Logic Gates
Gili, Xavier
Barcelo, Salvador
Bota, Sebastia A.
Segura, Jaume
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) : 971 - 979
[7] Methods for Susceptibility Analysis of Logic Gates in the Presence of Single Event Transients
Schvittz, Rafael B.
Butzen, Paulo E.
da Rosa Jr, Leomar S.
2020 IEEE INTERNATIONAL TEST CONFERENCE (ITC), 2020,
[8] Mitigation of single-event transients in CMOS digital circuits
Mongkolkachit, P
Bhuva, B
Boulghassoul, Y
Rowe, J
Massengill, L
PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2004, 536 : 335 - 340
[9] Single event transients mitigation techniques for CMOS integrated VCOs
Gonzalez Ramirez, David
Lalchand Khemchandani, Sunil
del Pino, Javier
Mayor-Duarte, Daniel
San Miguel-Montesdeoca, Mario
Mateos-Angulo, Sergio
MICROELECTRONICS JOURNAL, 2018, 73 : 37 - 42
[10] Single Event Transients in 28-nm CMOS Decoders
Stenin, Vladimir Ya.
Levin, Konstantin E.
2016 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), 2016,

← 1 2 3 4 5 →