Hexagonal diamond synthesis on h-GaN strained films

被引：21
|
作者：
Misra, Abha
Tyagi, Pawan K.
Yadav, Brajesh S.
Rai, P.
Misra, D. S. [1 ]
Pancholi, Vivek
Samajdar, I. D.
机构：
[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期
关键词：
X-RAY-DIFFRACTION; RAMAN-SPECTROSCOPY; PHASE-TRANSFORMATION; GRAPHITE; CARBON; TEMPERATURE; STRESS;
D O I：
10.1063/1.2218043
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Chemical vapor deposited diamond films grown on strained gallium nitride-coated quartz substrate are found to display a dominantly hexagonal diamond phase. The phase identification is done using Raman spectroscopy and orientation imaging microscopy (OIM). The presence of a 1324.4 cm(-1) band in the Raman spectra is attributed to a hexagonal diamond symmetry, but the unambiguous signature of the hexagonal phase is confirmed by OIM. A phase map of the sample clearly shows that 88% of the scanned sample area is hexagonal diamond. (c) 2006 American Institute of Physics.
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页数：3
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