Hexagonal diamond synthesis on h-GaN strained films

被引：21

作者：

Misra, Abha

Tyagi, Pawan K.

Yadav, Brajesh S.

Rai, P.

Misra, D. S. ^{[1
]}

Pancholi, Vivek

Samajdar, I. D.

机构：

[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

[2] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

关键词：

X-RAY-DIFFRACTION; RAMAN-SPECTROSCOPY; PHASE-TRANSFORMATION; GRAPHITE; CARBON; TEMPERATURE; STRESS;

D O I：

10.1063/1.2218043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical vapor deposited diamond films grown on strained gallium nitride-coated quartz substrate are found to display a dominantly hexagonal diamond phase. The phase identification is done using Raman spectroscopy and orientation imaging microscopy (OIM). The presence of a 1324.4 cm(-1) band in the Raman spectra is attributed to a hexagonal diamond symmetry, but the unambiguous signature of the hexagonal phase is confirmed by OIM. A phase map of the sample clearly shows that 88% of the scanned sample area is hexagonal diamond. (c) 2006 American Institute of Physics.

引用

页数：3

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