Ti ion density in inductively coupled plasma enhanced dc magnetron sputtering

被引：13
|
作者：
Nakamura, T [1 ]
Okimura, K [1 ]
机构：
[1] Tokai Univ, Dept Elect, Kanagawa 2591292, Japan
来源：
VACUUM | 2004年 / 74卷 / 3-4期
关键词：
Ti ion; inductively coupled plasma; ionization fraction of Ti; optical absorption; Langmuir probe;
D O I：
10.1016/j.vacuum.2004.01.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion density of sputtered titanium (Ti) in inductively coupled plasma (ICP) enhanced de magnetron sputtering was measured using an optical absorption method at Ar pressure of 3.5 Pa for target bias voltages of -600, -400 and -200 V. The radio frequency coil power for the ICP ranged from 40 to 240 W. Ti ionization fractions were calculated from the Ti ion and Ti atom densities measured at roughly the middle position of the coil. Plasma parameters of the ICP were, also, measured by a single Langmuir probe. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：391 / 395
页数：5
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