Advanced RF CMOS technology

被引：0

作者：

Iwai, H ^{[1
]}

Ohguro, T ^{[1
]}

Morifuji, E ^{[1
]}

Yoshitomi, T ^{[1
]}

Kimijima, H ^{[1
]}

Momose, HS ^{[1
]}

Inoh, K ^{[1
]}

Nii, H ^{[1
]}

Katsumata, Y ^{[1
]}

机构：

[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

DESIGN, CHARACTERIZATION, AND PACKAGING FOR MEMS AND MICROELECTRONICS | 1999年 / 3893卷

关键词：

RF; CMOS; technology; high frequency; analog; digital;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS has been used for advanced LSIs so many years because of its excellent low-power and high-speed characteristics for highly-integrated digital circuits. For high frequency analog applications such as RF, it has not been used popularly because CMOS has been assumed to have poor capability compared with silicon bipolar and compound semiconductor devices. However, recent miniaturization of CMOS devices has significantly improved the CMOS RF characteristics. For example, typical values of f(T) and fmax for 0.25 mu m n-MOSFETs already exceed 40 GHz, and those for 0.1 mu m n-MOSFETs are more than 100 GHz. RF noise of the MOSFETs is also as good as less than 1 dB at 2 GHz operations. In this paper, CMOS technology for RF front-end circuit for mobile telecommunication devices is explained.

引用

页码：10 / 19

页数：10

共 50 条

[1] Advanced RF CMOS technology
Iwai, H
Ohguro, T
Morifuji, E
Yoshitomi, T
Kimijima, H
Momose, HS
Inoh, K
Nii, H
Katsumata, Y
EDUCATION IN MICROELECTRONICS AND MEMS, 1999, 3894 : 10 - 19
[2] Advanced RF CMOS technology
Iwai, H
Ohguro, T
Morifuji, E
Yoshitomi, T
Kimijima, H
Momose, HS
Inoh, K
Nii, H
Katsumata, Y
ELECTRONICS AND STRUCTURES FOR MEMS, 1999, 3891 : 10 - 19
[3] Advanced RF CMOS technology
Iwai, H
Ohguro, T
Morifuji, E
Yoshitomi, T
Kimijima, H
DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS, 1999, 3892 : 10 - 19
[4] Advanced SOI CMOS technology for RF applications
Demeûs, L
Chen, J
Eggermont, JP
Gillon, R
Raskin, JP
Vanhoenacker, D
Flandre, D
1998 URSI SYMPOSIUM ON SIGNALS, SYSTEMS, AND ELECTR ONICS, 1998, : 134 - 139
[5] Advanced SOI CMOS technology for RF applications
Demeus, L.
Chen, J.
Eggermont, J.-P.
Gillon, R.
Raskin, J.-P.
Vanhoenacker, D.
Flandre, D.
Conference Proceedings of the International Symposium on Signals, Systems and Electronics, 1998, : 134 - 139
[6] Advanced CMOS technology portfolio for RF IC applications
Chang, CS
Chao, CP
Chern, JGJ
Sun, JYC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1324 - 1334
[7] RF CMOS technology for MMIC
Chang, CY
Su, JG
Wong, SC
Huang, TY
Sun, YC
MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) : 721 - 733
[8] Design for integration of RF power transistors in 0.13 μm advanced CMOS technology
Huang, Sheng-Yi
Chen, Kun-Ming
Huang, Guo-Wei
Chang, Chun-Yen
Hung, Cheng-Chou
Liang, Victor
Chen, Bo-Yuan
2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 323 - +
[9] CMOS technology for MS/RF SoC
Diaz, CH
2004 IEEE WORKSHOP ON MICROELECTRONIC AND ELECTRON DEVICES, 2004, : 24 - 27
[10] CMOS technology adjusts to RF applications
Kolding, TE
Mikkelsen, JH
Larsen, T
MICROWAVES & RF, 1998, 37 (06) : 79 - +

← 1 2 3 4 5 →