Design for integration of RF power transistors in 0.13 μm advanced CMOS technology

被引：5
|
作者：
Huang, Sheng-Yi [1 ]
Chen, Kun-Ming [2 ]
Huang, Guo-Wei [2 ]
Chang, Chun-Yen [1 ]
Hung, Cheng-Chou
Liang, Victor
Chen, Bo-Yuan [2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Nano Device Labs, Hsinchu, Taiwan
来源：
2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年
关键词：
CMOS; linearity; power transistor; power amplifier; RF SoC;
D O I：
10.1109/MWSYM.2007.380417
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An RF power MOSFET was proposed and manufactured in a standard 0.13 mu m CMOS technology. Without adding additional masks, cost and process, the breakdown voltage can be improved by using the N-well and shallow-trench-isolation processes to form a drift n(-) region. The breakdown voltage was 4.3V at gate bias of 1.2V. The cutoff frequency and maximum oscillation frequency were 68GHz and 87GHz, respectively. In addition, the power gain, output power and power-added efficiency were 16.8dB, 15.9dBm and 43.5%, respectively, at 2.4GHz. Good RF linearity also addressed OIP3 of 28.6dBm. The presented RF power transistor is cost effectively and can be applied into the power amplifier integration for RF SoC.
引用
收藏
页码：323 / +
页数：2
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