Advanced RF CMOS technology

被引：0

作者：

Iwai, H ^{[1
]}

Ohguro, T ^{[1
]}

Morifuji, E ^{[1
]}

Yoshitomi, T ^{[1
]}

Kimijima, H ^{[1
]}

Momose, HS ^{[1
]}

Inoh, K ^{[1
]}

Nii, H ^{[1
]}

Katsumata, Y ^{[1
]}

机构：

[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

DESIGN, CHARACTERIZATION, AND PACKAGING FOR MEMS AND MICROELECTRONICS | 1999年 / 3893卷

关键词：

RF; CMOS; technology; high frequency; analog; digital;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS has been used for advanced LSIs so many years because of its excellent low-power and high-speed characteristics for highly-integrated digital circuits. For high frequency analog applications such as RF, it has not been used popularly because CMOS has been assumed to have poor capability compared with silicon bipolar and compound semiconductor devices. However, recent miniaturization of CMOS devices has significantly improved the CMOS RF characteristics. For example, typical values of f(T) and fmax for 0.25 mu m n-MOSFETs already exceed 40 GHz, and those for 0.1 mu m n-MOSFETs are more than 100 GHz. RF noise of the MOSFETs is also as good as less than 1 dB at 2 GHz operations. In this paper, CMOS technology for RF front-end circuit for mobile telecommunication devices is explained.

引用

页码：10 / 19

页数：10

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