An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

被引：15

作者：

Hsu, Hsiao-Hsuan ^{[1
]}

Chang, Chun-Yen ^{[1
]}

Cheng, Chun-Hu ^{[2
]}

Chiou, Shan-Haw ^{[3
]}

Huang, Chiung-Hui ^{[3
]}

Chiu, Yu-Chien ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 10610, Taiwan

[3] Ind Technol Res Inst, Mat & Chem Res Lab, Hsinchu 31040, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 05期

关键词：

Gettering; InGaZnO (IGZO); thin-film transistor (TFT); titanium oxide (TiOx); GATE DIELECTRICS; ZINC-OXIDE;

D O I：

10.1109/TNANO.2014.2332395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

引用

页码：933 / 938

页数：6

共 50 条

[41] Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors
Faber, Hendrik
Hirschmann, Johannes
Klaumuenzer, Martin
Braunschweig, Bjoern
Peukert, Wolfgang
Halik, Marcus
ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (03) : 1693 - 1696
[42] Evolution of solution-based organic thin-film transistor for healthcare monitoring- from device to circuit integration: A review
Yusof, Nur Syahadah
Mohamed, Mohamed Fauzi Packeer
Ghazali, Nor Azlin
Khan, Muhammad Firdaus Akbar Jalaludin
Shaari, Safizan
Mohtar, Mohd Nazim
ALEXANDRIA ENGINEERING JOURNAL, 2022, 61 (12) : 11405 - 11431
[43] All-Oxide Transparent Thin-Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing
Lahr, Oliver
Bar, Michael S.
von Wenckstern, Holger
Grundmann, Marius
ADVANCED ELECTRONIC MATERIALS, 2020, 6 (10):
[44] All-Oxide Transparent Thin-Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing
Lahr, Oliver
Bar, Michael S.
von Wenckstern, Holger
Grundmann, Marius
Advanced Electronic Materials, 2020, 6 (10):
[45] High Mobility, Low Off-Current, and Flexible Fiber-Based a-InGaZnO Thin-Film Transistors toward Wearable Textile OLED Displays
Kim, Chan Young
Hwang, Yong Ha
Chang, Jaehyeock
Kong, Seong Uk
Park, Sang-Hee Ko
Choi, Kyung Cheol
ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (45) : 62335 - 62346
[46] Impact of Oxygen Vacancy on the Photo-Electrical Properties of In2O3-Based Thin-Film Transistor by Doping Ga
Chen, Kuan-Yu
Yang, Chih-Chiang
Su, Yan-Kuin
Wang, Zi-Hao
Yu, Hsin-Chieh
MATERIALS, 2019, 12 (05)
[47] Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method
Takahashi, Takanori
Uraoka, Yukiharu
APPLIED PHYSICS EXPRESS, 2025, 18 (01)
[48] Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method
Takahashi, Takanori
Uraoka, Yukiharu
Applied Physics Express, 18 (01):
[49] Steep Subthreshold Slope in Solution-Gated Indium-Tin-Oxide-Based One-Piece Thin-Film Transistor Enables Highly Sensitive Biosensing
Katayama, Ritsu
Dong, Xianqi
Sakata, Toshiya
ACS APPLIED ELECTRONIC MATERIALS, 2025, 7 (05) : 1862 - 1870
[50] Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend
Leydecker, Tim
Herder, Martin
Pavlica, Egon
Bratina, Gvido
Hecht, Stefan
Orgiu, Emanuele
Samori, Paolo
NATURE NANOTECHNOLOGY, 2016, 11 (09) : 769 - 775

← 1 2 3 4 5 →