An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

被引：15

作者：

Hsu, Hsiao-Hsuan ^{[1
]}

Chang, Chun-Yen ^{[1
]}

Cheng, Chun-Hu ^{[2
]}

Chiou, Shan-Haw ^{[3
]}

Huang, Chiung-Hui ^{[3
]}

Chiu, Yu-Chien ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 10610, Taiwan

[3] Ind Technol Res Inst, Mat & Chem Res Lab, Hsinchu 31040, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 05期

关键词：

Gettering; InGaZnO (IGZO); thin-film transistor (TFT); titanium oxide (TiOx); GATE DIELECTRICS; ZINC-OXIDE;

D O I：

10.1109/TNANO.2014.2332395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

引用

页码：933 / 938

页数：6

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