A quantum "hole" is realized by SiGe device

被引：0
|
作者：
Yao, L [1 ]
机构：
[1] Univ Sci & Technol China, Lab Quantum Commun & Quantum Computat, Hefei 230026, Peoples R China
来源：
2002 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si/SiGe quantum structure is suggested in my paper, then qubits are obtained. We analyze such structure's physical mechanism for application.
引用
收藏
页码：99 / 102
页数：4
相关论文
共 50 条
  • [31] Single-hole transistor in a p-Si/SiGe quantum well
    Dötsch, U
    Gennser, U
    David, C
    Dehlinger, G
    Grützmacher, D
    Heinzel, T
    Lüscher, S
    Ensslin, K
    APPLIED PHYSICS LETTERS, 2001, 78 (03) : 341 - 343
  • [32] Reduced quantum confinement effect and electron-hole separation in SiGe nanowires
    Amato, Michele
    Palummo, Maurizia
    Ossicini, Stefano
    PHYSICAL REVIEW B, 2009, 79 (20):
  • [33] Single-hole tunneling into a strain-induced SiGe quantum ring
    Liu, J
    Zaslavsky, A
    Perkins, BR
    Aydin, C
    Freund, LB
    PHYSICAL REVIEW B, 2002, 66 (16)
  • [34] Hole-sheet-density in SiGe pMOS quantum well with δ-doping-layer
    Hu, HY
    Zhang, HM
    Dai, XY
    Lu, Y
    Shu, B
    Wang, W
    Jiang, T
    Wang, XY
    ACTA PHYSICA SINICA, 2004, 53 (12) : 4314 - 4318
  • [35] Effective mass measurement:: the influence of hole band nonparabolicity in SiGe/Ge quantum wells
    Roessner, Benjamin
    von Kaenel, Hans
    Chrastina, Daniel
    Isella, Giovanni
    Batlogg, Bertram
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (01) : S191 - S194
  • [36] Multicomponent Structure of an Electron-Hole Liquid in Shallow SiGe/Si Quantum Wells
    Nikolaev S.N.
    Bagaev V.S.
    Krivobok V.S.
    Davletov E.T.
    Gulyashko A.S.
    Kopytov G.F.
    Vasil’chenko A.A.
    Bulletin of the Russian Academy of Sciences: Physics, 2018, 82 (4) : 427 - 430
  • [37] Hole transport due to shallow acceptors along boron doped SiGe quantum wells
    Altukhov, IV
    Kagan, MS
    Sinis, VP
    Thomas, SG
    Wang, KL
    Blom, A
    Odnoblyudov, MO
    THIN SOLID FILMS, 2000, 380 (1-2) : 218 - 220
  • [38] Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film
    Cheng, S. -Y.
    Chen, K. -T.
    Chang, S. T.
    THIN SOLID FILMS, 2015, 584 : 135 - 140
  • [39] Deep-ultraviolet light-emitting device realized via a hole-multiplication process
    Zhu, H.
    Shan, C. X.
    Li, B. H.
    Zhang, Z. Z.
    Yao, B.
    Shen, D. Z.
    APPLIED PHYSICS LETTERS, 2011, 99 (10)
  • [40] Spin band-gap renormalization and hole spin dynamics in Ge/SiGe quantum wells
    Lange, C.
    Isella, G.
    Chrastina, D.
    Pezzoli, F.
    Koester, N. S.
    Woscholski, R.
    Chatterjee, S.
    PHYSICAL REVIEW B, 2012, 85 (24):
12345