A quantum "hole" is realized by SiGe device

被引：0
|
作者：
Yao, L [1 ]
机构：
[1] Univ Sci & Technol China, Lab Quantum Commun & Quantum Computat, Hefei 230026, Peoples R China
来源：
2002 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si/SiGe quantum structure is suggested in my paper, then qubits are obtained. We analyze such structure's physical mechanism for application.
引用
收藏
页码：99 / 102
页数：4
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