Fabrication of Blue Light-Emitting Diode with Vertical Structure on the ZnO Substrate

被引：6

作者：

Qiao, Liang ^{[1
,2
]}

He, Miao ^{[1
,3
]}

Zheng, Shuwen ^{[3
]}

Li, Shuti ^{[3
]}

机构：

[1] South China Normal Univ, Inst Optoelect Mat & Technol, Guangdong Prov Key Lab Nanophoton Funct Mat & Dev, Guangzhou 510631, Guangdong, Peoples R China

[2] Chinese Acad Sci, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys, Key Lab Renewable Energy,Inst Phys, Beijing 100190, Peoples R China

[3] Guangdong Univ Technol, Coll Phys & Optoelect Engn, Guangzhou 510006, Guangdong, Peoples R China

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2017年 / 12卷 / 01期

基金：

高等学校博士学科点专项科研基金;

关键词：

MOCVD; LED; ZnO Substrate; GAN; GROWTH;

D O I：

10.1166/jno.2017.1994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the vertical structural light-emitting diode (LED) on ZnO substrate was fabricated by the metalorganic vapor chemical deposition (MOCVD) technology. In the fabrication process, a low temperature GaN layer was inserted between InGaN quantum well (QW) and p-AlGaN electron blocking layer (EBL). The results of experiments show that the performance of the GaN-based LED on the ZnO substrate was enhanced.

引用

页码：76 / 79

页数：4

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