Fabrication of Blue Light-Emitting Diode with Vertical Structure on the ZnO Substrate

被引：6
|
作者：
Qiao, Liang [1 ,2 ]
He, Miao [1 ,3 ]
Zheng, Shuwen [3 ]
Li, Shuti [3 ]
机构：
[1] South China Normal Univ, Inst Optoelect Mat & Technol, Guangdong Prov Key Lab Nanophoton Funct Mat & Dev, Guangzhou 510631, Guangdong, Peoples R China
[2] Chinese Acad Sci, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys, Key Lab Renewable Energy,Inst Phys, Beijing 100190, Peoples R China
[3] Guangdong Univ Technol, Coll Phys & Optoelect Engn, Guangzhou 510006, Guangdong, Peoples R China
来源：
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2017年 / 12卷 / 01期
基金：
高等学校博士学科点专项科研基金;
关键词：
MOCVD; LED; ZnO Substrate; GAN; GROWTH;
D O I：
10.1166/jno.2017.1994
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the vertical structural light-emitting diode (LED) on ZnO substrate was fabricated by the metalorganic vapor chemical deposition (MOCVD) technology. In the fabrication process, a low temperature GaN layer was inserted between InGaN quantum well (QW) and p-AlGaN electron blocking layer (EBL). The results of experiments show that the performance of the GaN-based LED on the ZnO substrate was enhanced.
引用
收藏
页码：76 / 79
页数：4
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