Electrical Characterization of Al, Ag and In Contacts on CuInS2 Thin Films Deposited by Spray Pyrolysis

被引：0
|
作者：
Manuel Peza-Tapia, Juan [1 ]
Morales-Acevedo, Arturo [1 ]
Ortega-Lopez, Mauricio [1 ]
机构：
[1] CINVESTAV, SEES, Dept Elect Engn, Mexico City 07360, DF, Mexico
来源：
2008 5TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE 2008) | 2008年
关键词：
Ohmic contact; CuInS2 thin films; spray pyrolysis;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The specific contact resistivity (pc) for Aluminum (M), Silver (Ag) and Indium (In) metallic contacts on CuInS2 thin films have been determined, from I - V measurements, with the purpose of having the most appropriate ohmic contact for TCO/CdS/CuInS2 solar cells. pc was measured using the transmission line (TLM) method for the metallic contacts evaporated on CuInS2 thin films deposited by spray pyrolysis with ratios x = [Cu] / [In] = 1.0, 1.1, 1.3 and 1.5 in the spray solution. The results show that In contacts have the lowest rho(C) values for CuInS2 samples grown with x = 1.5. The minimum rho(C) was 0.26 ohm-cm(2) for the In contacts. This value, although not very low, will allow the fabrication of CuInS2 solar cells with a small series resistance.
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页码：205 / 209
页数：5
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