Green luminescence in Mg-doped GaN

被引：129
|
作者：
Reshchikov, M. A. [1 ]
Demchenko, D. O. [1 ]
McNamara, J. D. [1 ]
Fernandez-Garrido, S. [2 ]
Calarco, R. [2 ]
机构：
[1] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
[2] Paul Drude Inst Festkorperlektron, D-10117 Berlin, Germany
来源：
PHYSICAL REVIEW B | 2014年 / 90卷 / 03期
关键词：
PHOTOLUMINESCENCE BANDS; ENERGY; PLASMA; DEFECTS; GALLIUM;
D O I：
10.1103/PhysRevB.90.035207
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (V-N). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the V-N defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.
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页数：14
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