Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode

被引：13

作者：

Banerjee, Koushik ^{[1
]}

Ghosh, Siddhartha ^{[1
]}

Mallick, Shubhrangshu ^{[2
]}

Plis, Elena ^{[3
]}

Krishna, Sanjay ^{[3
]}

Grein, Christoph ^{[4
]}

机构：

[1] Univ Illinois, Dept ECE, Lab Photon & Magnet, Chicago, IL 60607 USA

[2] EPIR Technol Inc, Unit B, Bolingbrook, IL 60440 USA

[3] Univ New Mexico, Dept ECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[4] Univ Illinois, Dept Phys, Chicago, IL 60607 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

关键词：

avalanche photodiodes; gallium compounds; III-V semiconductors; impact ionisation; indium compounds; noise; semiconductor superlattices; NOISE;

D O I：

10.1063/1.3139012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Midwavelength infrared InAs-GaSb strained layer superlattice n(+)-n(-)-p avalanche photodiodes, specifically designed to have hole dominated avalanching, with a zero percent cutoff wavelength of similar to 6.3 mu m are fabricated and characterized. Maximum multiplication gain of 105 is measured at -3.6 V at 77 K. Measured excess noise factors are significantly improved compared to unity hole to electron ionization ratio and corresponds to a theoretical value between 40 and 50 when compared with the McIntyre model. Exponential nature of the gain as a function of reverse bias along with low excess noise factors confirms single carrier hole dominated impact ionization.

引用

页数：3

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