Midwave infrared quantum dot avalanche photodiode

被引：20
|
作者：
Ramirez, David A. [1 ]
Shao, Jiayi
Hayat, Majeed M.
Krishna, Sanjay
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期
基金：
美国国家科学基金会;
关键词：
QUENCHING-CIRCUITS; IMPACT-IONIZATION; NOISE;
D O I：
10.1063/1.3520519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first demonstration of a GaAs based avalanche photodiode (APD) operating in the midwave infrared region (3-5 mu m). In the device, called the quantum dot avalanche photodiode, an intersubband quantum dots-in-a-well detector is coupled with an APD through a tunnel barrier. Using this approach, we have increased the photocurrent and reached a conversion efficiency of 12%, which is one of the highest reported conversion efficiencies for any quantum dot detector. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3520519]
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页数：3
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