Photoluminescence analysis of Cd1-xZnxTe single crystals annealed by a two-step method

被引：9

作者：

Yang, Ge ^{[1
]}

Jie, Wanqi ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 294卷 / 02期

基金：

中国国家自然科学基金;

关键词：

defects; impurities; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2006.06.016

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Cd1-xZnxTe (CZT) single crystals were annealed by a two-step method, including a vapor-environment step and a liquid-environment step in sequence. Photoluminescence spectra were used to investigate the effects of annealing on the properties of CZT. After annealing the full width at half maximum of the donor-bound exciton (D-0,X) peak was reduced, and the free-exciton emission was weakened. Meanwhile, the intensity of the donor-acceptor pair peak was greatly decreased. In addition, the deep defect-related emission band D-complex disappeared after the annealing, which was distinct for as-grown CZT wafers. The investigation confirms that the two-step annealing can compensate for cadmium vacancies and possibly reduce the impurities from CZT wafers. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：250 / 253

页数：4

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