Photoluminescence analysis of Cd1-xZnxTe single crystals annealed by a two-step method

被引：9
|
作者：
Yang, Ge [1 ]
Jie, Wanqi [1 ]
机构：
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 294卷 / 02期
基金：
中国国家自然科学基金;
关键词：
defects; impurities; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2006.06.016
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Cd1-xZnxTe (CZT) single crystals were annealed by a two-step method, including a vapor-environment step and a liquid-environment step in sequence. Photoluminescence spectra were used to investigate the effects of annealing on the properties of CZT. After annealing the full width at half maximum of the donor-bound exciton (D-0,X) peak was reduced, and the free-exciton emission was weakened. Meanwhile, the intensity of the donor-acceptor pair peak was greatly decreased. In addition, the deep defect-related emission band D-complex disappeared after the annealing, which was distinct for as-grown CZT wafers. The investigation confirms that the two-step annealing can compensate for cadmium vacancies and possibly reduce the impurities from CZT wafers. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：250 / 253
页数：4
相关论文
共 50 条
  • [31] Solid-solution hardening of Cd1-xZnxTe bulk crystals
    Schenk, M
    Le, THD
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (03) : 335 - 339
  • [32] Dielectric properties of melt-grown Cd1-xZnxTe crystals
    Komar, VK
    Migal, VP
    Nalivaiko, DP
    Chugai, ON
    INORGANIC MATERIALS, 2001, 37 (05) : 449 - 451
  • [33] Effect of Growth Conditions on the Compositional Homogeneity of Cd1-xZnxTe Crystals
    Gonik, M. A.
    Gonik, M. M.
    Tomson, A. S.
    INORGANIC MATERIALS, 2009, 45 (10) : 1103 - 1113
  • [34] Growth and characterization of Cd1-xZnxTe crystals with high Zn concentrations
    Bueno, JJP
    Rodríguez, ME
    Zelaya-Angel, O
    Baquero, R
    Gonzalez-Hernández, J
    Baños, L
    Fitzpatrick, BJ
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) : 701 - 708
  • [35] Twinning in vapour-grown, large volume Cd1-xZnxTe crystals
    Tanner, B. K.
    Mullins, J. T.
    Pym, A. T. G.
    Maneuski, D.
    JOURNAL OF CRYSTAL GROWTH, 2016, 448 : 44 - 50
  • [36] PVT-grown single crystals of Cd1-xZnxTe (x≤0.25) and ZnTe as substrates for epitaxy
    Mycielski, A
    Szadkowski, A
    Lusakowska, E
    Kowalczyk, L
    Domagala, J
    Bak-Misiuk, J
    Wilamowski, Z
    Witkowska, B
    ACTA PHYSICA POLONICA A, 1998, 94 (03) : 441 - 445
  • [37] DC photoconductivity study of semi-insulating Cd1-xZnxTe crystals
    Cui, Y
    Wright, GW
    Ma, X
    Chattopadhyay, K
    James, RB
    Burger, A
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (06) : 774 - 778
  • [38] Growth of Cd1-xZnxTe crystals with different x values and their qualities comparison
    Li, GQ
    Jie, WQ
    Gu, Z
    Hua, H
    JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 332 - 337
  • [39] Dielectric properties and quality of Cd1-XZnXTe crystals for gamma radiation detectors
    Poluboiarova, O. O.
    Chugai, O. N.
    Oleynick, S. V.
    Sulima, S. V.
    SENSORS AND ACTUATORS A-PHYSICAL, 2016, 244 : 233 - 236
  • [40] Gamma-stimulated change of the photoluminescence properties of Cd1-xZnxTe thin films
    Nasieka, Iu
    Rashkovetskyi, L.
    Strilchuk, O.
    Danilchenko, B.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 648 (01): : 290 - 292
12345