Photoluminescence analysis of Cd1-xZnxTe single crystals annealed by a two-step method

被引:9
|
作者
Yang, Ge [1 ]
Jie, Wanqi [1 ]
机构
[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
defects; impurities; semiconducting II-VI materials;
D O I
10.1016/j.jcrysgro.2006.06.016
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Cd1-xZnxTe (CZT) single crystals were annealed by a two-step method, including a vapor-environment step and a liquid-environment step in sequence. Photoluminescence spectra were used to investigate the effects of annealing on the properties of CZT. After annealing the full width at half maximum of the donor-bound exciton (D-0,X) peak was reduced, and the free-exciton emission was weakened. Meanwhile, the intensity of the donor-acceptor pair peak was greatly decreased. In addition, the deep defect-related emission band D-complex disappeared after the annealing, which was distinct for as-grown CZT wafers. The investigation confirms that the two-step annealing can compensate for cadmium vacancies and possibly reduce the impurities from CZT wafers. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:250 / 253
页数:4
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