Angle-resolved photoemission from surface states

被引:27
|
作者
Krasovskii, EE [1 ]
Schattke, W
机构
[1] Univ Kiel, Inst Theoret Phys, Leibnizstr 15, D-24098 Kiel, Germany
[2] Donostia Int Phys Ctr, Donostia San Sebastian 20018, Spain
关键词
D O I
10.1103/PhysRevLett.93.027601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The role of the evanescent part of the unoccupied complex band structure in photoemission from surface states is revealed. The frequency dependence of the emission intensity from two surface states on the (100) and (111) surfaces of Al in the photon energy range from 40 to 110 eV is explained within an ab initio one-step theory of photoemission. A novel embedding method to determine surface states is presented. A high sensitivity of surface states spectra to details of the surface potential barrier is predicted, which offers a way to efficiently monitor surface properties.
引用
收藏
页码:027601 / 1
页数:4
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