Atom-by-Atom Fabrication of Single and Few Dopant Quantum Devices

被引:42
|
作者
Wyrick, Jonathan [1 ]
Wang, Xiqiao [1 ,2 ,3 ]
Kashid, Ranjit, V [1 ]
Namboodiri, Pradeep [1 ]
Schmucker, Scott W. [1 ,2 ]
Hagmann, Joseph A. [1 ]
Liu, Keyi [1 ,2 ,4 ]
Stewart, Michael D., Jr. [1 ]
Richter, Curt A. [1 ]
Bryant, Garnett W. [1 ]
Silver, Richard M. [1 ]
机构
[1] NIST, Nanoscale Device Characterizat Div, Gaithersburg, MD 20899 USA
[2] Univ Maryland, Joint Quantum Inst, College Pk, MD 20742 USA
[3] Univ Maryland, Chem Phys Program, College Pk, MD 20742 USA
[4] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
关键词
charge transport; nanodevices; quantum dots; single electron transistors; SCALE DESORPTION; SILICON; SI; TRANSPORT; DONORS; SPECTROSCOPY; TEMPERATURE; CONFINEMENT; ACCEPTORS; PHOSPHINE;
D O I
10.1002/adfm.201903475
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Atomically precise fabrication has an important role to play in developing atom-based electronic devices for use in quantum information processing, quantum materials research, and quantum sensing. Atom-by-atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on-site charging energies, and other key properties of basic devices needed for solid-state quantum computing and analog quantum simulation. Using hydrogen-based scanning probe lithography, individual dopant atoms are deterministically placed relative to atomically aligned contacts and gates to build single electron transistors, single atom transistors, and gate-controlled quantum sensing devices. The key steps required to fabricate and demonstrate the essential building blocks needed for spin selective initialization/readout and coherent quantum manipulation are described.
引用
收藏
页数:11
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