Effect of nitrogen flow rate on the mechanical properties of CVD-deposited SiCN thin films

被引：4

作者：

Kumar, Dhruva ^{[1
]}

Ghadai, Ranjan Kr ^{[1
]}

Das, Soham ^{[1
]}

Sharma, Ashis ^{[1
]}

Swain, Bibhu P. ^{[2
]}

机构：

[1] Sikkim Manipal Univ, Sikkim Manipal Inst Technol, Dept Mech Engn, Gangtok 737136, India

[2] Natl Inst Technol Manipur, Dept Phys, Langol 795004, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2019年 / 42卷 / 05期

关键词：

SiCN; Raman; XRD; FTIR; nanoindentation; AMORPHOUS-SILICON; THERMAL-CONDUCTIVITY; RAMAN-SPECTROSCOPY; NITRIDE; CARBON; BEHAVIOR; HARDNESS; CERAMICS; NETWORK;

D O I：

10.1007/s12034-019-1937-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbonitride (SiCN) thin films were deposited on p-Si (100) substrates with different N-2 flow rates using SiC and Si3N4 powder precursors by chemical vapour deposition. To investigate the structural, vibrational and mechanical properties, the SiCN thin films were characterized by atomic force microscopy, Raman spectroscopy, X-ray diffraction (XRD), Fourier transform infrared and nanoindentation techniques. The XRD results reveal nanocrystals embedded with amorphous networks in the SiCN thin films. An increase in the ID/IG ratio with an increase in the N-2 flow rate indicated the increase of sp3 bonds in the SiCN thin film. The hardness (H), Young's modulus (E), plasticity index (H/E) and (H-3/E-2) increase with an increase in the N-2 flow rate.

引用

页数：7

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