Velocity barrier-controlled of spin-valley polarized transport in monolayer WSe2 junction

被引:5
|
作者
Qiu, Xuejun [1 ]
Lv, Qiang [1 ]
Cao, Zhenzhou [1 ]
机构
[1] South Cent Univ Nationalities, Coll Elect & Informat, Hubei Key Lab Intelligent Wireless Commun, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
Spin; Valley; Polarization; WSe2; Velocity barrier; MOS2; SPINTRONICS; LOCKING;
D O I
10.1016/j.spmi.2018.03.082
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, we have theoretically investigated the influence of velocity barrier on the spin-valley polarized transport in monolayer (ML) WSe2 junction with a large spin-orbit coupling (SOC). Both the spin-valley resolved transmission probabilities and conductance are strong dependent on the velocity barrier, as the velocity barrier decreases to 0.06, a spin-valley polarization of exceeding 90% is observed, which is distinct from the ML MoS2 owing to incommensurable SOC. In addition, the spin-valley polarization is further increased above 95% in a ML WSe2 superlattice, in particular, it's found many extraordinary velocity barrier-dependent transport gaps for multiple barrier due to evanescent tunneling. Our results may open an avenue for the velocity barrier-controlled high-efficiency spin and valley polarizations in ML WSe2-based electronic devices. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:449 / 456
页数:8
相关论文
共 50 条
  • [41] Band valley modification under strain in monolayer WSe2
    Tran, Thi Nhan
    Dang, Minh Triet
    Tran, Quang Huy
    Luong, Thi Theu
    Dinh, Van An
    AIP ADVANCES, 2022, 12 (11)
  • [42] Enhanced Valley Splitting in Monolayer WSe2 by Phase Engineering
    Liu, Haiyang
    Fu, Deyi
    Li, Xu
    Han, Junbo
    Chen, Xiaodie
    Wu, Xuefeng
    Sun, Baofan
    Tang, Weiqing
    Ke, Congming
    Wu, Yaping
    Wu, Zhiming
    Kang, Junyong
    ACS NANO, 2021, 15 (05) : 8244 - 8251
  • [43] Valley dynamics of different trion species in monolayer WSe2
    Fu, Jiyong
    Cruz, Junio M. R.
    Qu, Fanyao
    APPLIED PHYSICS LETTERS, 2019, 115 (08)
  • [44] Spin- and valley-coupled electronic states in monolayer WSe2 on bilayer graphene
    Sugawara, K.
    Sato, T.
    Tanaka, Y.
    Souma, S.
    Takahashi, T.
    APPLIED PHYSICS LETTERS, 2015, 107 (07)
  • [45] Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS2 in a perpendicular magnetic field
    Rostami, Habib
    Asgari, Reza
    PHYSICAL REVIEW B, 2015, 91 (07)
  • [46] Spatially-resolved measurements of spin valley polarization in MOCVD-grown monolayer WSe2
    Batalden, Spencer
    Sih, Vanessa
    OPTICS EXPRESS, 2021, 29 (11): : 17269 - 17276
  • [47] Spin splitting and strain in epitaxial monolayer WSe2 on graphene
    Nakamura, H.
    Mohammed, A.
    Rosenzweig, Ph
    Matsuda, K.
    Nowakowski, K.
    Kuester, K.
    Wochner, P.
    Ibrahimkutty, S.
    Wedig, U.
    Hussain, H.
    Rawle, J.
    Nicklin, C.
    Stuhlhofer, B.
    Cristiani, G.
    Logvenov, G.
    Takagi, H.
    Starke, U.
    PHYSICAL REVIEW B, 2020, 101 (16)
  • [48] Unveiling Ultrafast Spin-Valley Dynamics and Phonon-Mediated Charge Transfer in MoSe2/WSe2 Heterostructures
    Wagner, Julian
    Bernhardt, Robin
    Rieland, Lukas
    Abdul-Aziz, Omar
    Li, Qiuyang
    Zhu, Xiaoyang
    Dal Conte, Stefano
    Cerullo, Giulio
    van Loosdrecht, Paul H. M.
    Hedayat, Hamoon
    ADVANCED OPTICAL MATERIALS, 2025, 13 (08):
  • [49] Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe2
    Song, Xinlin
    Xie, Saien
    Kang, Kibum
    Park, Jiwoong
    Sih, Vanessa
    NANO LETTERS, 2016, 16 (08) : 5010 - 5014
  • [50] Long valley relaxation time of free carriers in monolayer WSe2
    Yan, Tengfei
    Yang, Siyuan
    Li, Dian
    Cui, Xiaodong
    PHYSICAL REVIEW B, 2017, 95 (24)