Velocity barrier-controlled of spin-valley polarized transport in monolayer WSe2 junction

被引:5
|
作者
Qiu, Xuejun [1 ]
Lv, Qiang [1 ]
Cao, Zhenzhou [1 ]
机构
[1] South Cent Univ Nationalities, Coll Elect & Informat, Hubei Key Lab Intelligent Wireless Commun, Wuhan 430074, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
Spin; Valley; Polarization; WSe2; Velocity barrier; MOS2; SPINTRONICS; LOCKING;
D O I
10.1016/j.spmi.2018.03.082
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, we have theoretically investigated the influence of velocity barrier on the spin-valley polarized transport in monolayer (ML) WSe2 junction with a large spin-orbit coupling (SOC). Both the spin-valley resolved transmission probabilities and conductance are strong dependent on the velocity barrier, as the velocity barrier decreases to 0.06, a spin-valley polarization of exceeding 90% is observed, which is distinct from the ML MoS2 owing to incommensurable SOC. In addition, the spin-valley polarization is further increased above 95% in a ML WSe2 superlattice, in particular, it's found many extraordinary velocity barrier-dependent transport gaps for multiple barrier due to evanescent tunneling. Our results may open an avenue for the velocity barrier-controlled high-efficiency spin and valley polarizations in ML WSe2-based electronic devices. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:449 / 456
页数:8
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