Thermal Characterization of Nonlinear Charge Trapping Effects in GaN-FETs

被引：0
|
作者：
Gibiino, Gian Piero [1 ,2 ]
Cignani, Rafael [1 ]
Niessen, Daniel [1 ]
Schreurs, Dominique [2 ]
Santarelli, Alberto [1 ]
Filicori, Fabio [1 ]
机构：
[1] Univ Bologna, DEI Guglielmo Marconi, Viale Risorgimento 2, I-40136 Bologna, Italy
[2] Katholieke Univ Leuven, Div ESAT TELEMIC, B-3001 Leuven, Belgium
来源：
2014 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2014年
关键词：
GaN FETs; Pulsed characterization; ElectroThermal empirical modelling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we describe a pulsed characterization of a 0.25-m GaN FET (W = 1 mm) at different operating temperatures. Through the use of a pulsing set-up featuring a VNA-like architecture, the drain DC current component is monitored and the effects of the AC-to-DC conversion due to nonlinear charge trapping phenomena are evaluated under various thermal conditions.
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页数：3
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