Thermal Characterization of Nonlinear Charge Trapping Effects in GaN-FETs

被引：0

作者：

Gibiino, Gian Piero ^{[1
,2
]}

Cignani, Rafael ^{[1
]}

Niessen, Daniel ^{[1
]}

Schreurs, Dominique ^{[2
]}

Santarelli, Alberto ^{[1
]}

Filicori, Fabio ^{[1
]}

机构：

[1] Univ Bologna, DEI Guglielmo Marconi, Viale Risorgimento 2, I-40136 Bologna, Italy

[2] Katholieke Univ Leuven, Div ESAT TELEMIC, B-3001 Leuven, Belgium

来源：

2014 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2014年

关键词：

GaN FETs; Pulsed characterization; ElectroThermal empirical modelling;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we describe a pulsed characterization of a 0.25-m GaN FET (W = 1 mm) at different operating temperatures. Through the use of a pulsing set-up featuring a VNA-like architecture, the drain DC current component is monitored and the effects of the AC-to-DC conversion due to nonlinear charge trapping phenomena are evaluated under various thermal conditions.

引用

页数：3

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