Annealing temperature effect on field emission of silicon emitter arrays with sol-gel (Ba0.65Sr0.35)TiO3 coatings

被引：4
|
作者：
Lu, H.
Chen, F.
Zhu, W. G.
Pan, J. S.
Tan, O. K.
机构：
[1] Nanyang Technol Univ, Ctr Microelect, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
FERROELECTRICS | 2006年 / 334卷
关键词：
BST thin film; electron emission; sol-gel;
D O I：
10.1080/00150190600695941
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ba0.65Sr0.35TiO3 (BST) thin films have been fabricated on silicon field emitter arrays (FEAs) using sol-gel coating for electron emission applications. The BSTcoatings exhibit the perovskite structure when annealed between 650 and 700 degrees C, and an interfacial reaction occurs when annealed above 750 degrees C The threshold electric field is lowered from 36 V/mu m for bare silicon tips to 19 V/mu m for BST-coated silicon tips. The oxygen vacancy concentration increases for BST thin films annealed from 600 to 750 degrees C, and decreases above 750 degrees C, leading to the Fermi energy shift. The electron emission behavior is correlated to both the microstructure and electronic structure of the BST thin films.
引用
收藏
页码：253 / 261
页数：9
相关论文
共 50 条
  • [41] Preparation and characterization of epitaxial-grown Ba0.65Sr0.35TiO3 thin films by the sol-gel process on Pt/MgO substrates
    Zhang, TJ
    Ni, H
    Wang, W
    JOURNAL OF MATERIALS SYNTHESIS AND PROCESSING, 2002, 10 (01) : 17 - 21
  • [42] Effect of oxygen gas and annealing treatment for magnetically enhanced reactive ion etched (Ba0.65,Sr0.35)TiO3 thin films
    Zhang, Baishun
    Quan, Zuci
    Zhang, Tianjin
    Guo, Tao
    Mo, Shaobo
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
  • [43] Preparation and dielectric properties of compositionally graded (Ba,Sr)TiO3 thin film by sol-gel technique
    Zhang, TJ
    Wang, J
    Zhang, BS
    Wang, JZ
    Wan, N
    Hu, L
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2006, 16 : S119 - S122
  • [44] Nonlinear behaviors of the compositionally graded (Ba,Sr)TiO3 thin films derived by a sol-gel process
    Zhai, JW
    Chen, H
    APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1162 - 1164
  • [45] Preparation and electric properties of La-doped-(Sr,Ba)TiO3 from sol-gel process
    Kong, LB
    Yao, X
    Zhang, LY
    FERROELECTRICS, 1999, 234 (1-4) : 211 - 222
  • [46] Preparation and dielectric properties of compositionally graded (Ba,Sr)TiO3 thin film by sol-gel technique
    章天金
    王军
    张柏顺
    王今朝
    万能
    胡兰
    Transactions of Nonferrous Metals Society of China, 2006, (S1) : 119 - 122
  • [47] Preparation and electric properties of La-doped-(Sr,Ba)TiO3 from sol-gel process
    Kong, Lingbing
    Yao, Xi
    Zhang, Liangying
    Ferroelectrics, 1999, 234 (01): : 211 - 222
  • [48] Effect of annealing temperature on the microstructure and dielectric properties of Ba0.6Sr0.4TiO3 thin films prepared by sol-gel process
    Dewi, R.
    Ibrahim, N. B.
    Talib, I. A.
    Ibarahim, Z.
    SAINS MALAYSIANA, 2008, 37 (03): : 261 - 264
  • [49] Effect of processing temperature on MOD grown Ba0.65Sr0.35TiO3 (BST) thin films
    Jana, P
    Pandey, RK
    INTEGRATED THIN FILMS AND APPLICATIONS, 1998, 86 : 225 - 232
  • [50] Effect of Annealing Temperature of Sol-Gel TiO2 Buffer Layer on Microstructure and Electrical Properties of Ba0.6Sr0.4TiO3 Films
    Ibrahim, N. B.
    Yusrianto, E.
    Zalita, Z.
    Ibarahim, Z.
    SAINS MALAYSIANA, 2012, 41 (03): : 339 - 344
12345