Reliability results of HBTs with an InGaP emitter (vol 46, pg 1261, 2006)

被引：0
|
作者：
Whitman, Charles S. [1 ]
机构：
[1] RF Micro Devices, Greensboro, NC 27409 USA
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 12期
关键词：
D O I：
10.1016/j.microrel.2006.08.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：2159 / 2159
页数：1
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